IndiumV3, Main, Repository, bibRecord, 000037

Structural, electrical and optical properties of radio frequency sputtered indium tin oxide thin films modified by annealing in silicon oil and vacuum

Identifieur interne : 000037 ( Main/Repository ); précédent : 000036; suivant : 000038

Structural, electrical and optical properties of radio frequency sputtered indium tin oxide thin films modified by annealing in silicon oil and vacuum

Auteurs : RBID : Pascal:14-0095755

Descripteurs français

Pascal (Inist)
- Propriété électrique, Propriété optique, Pulvérisation haute fréquence, Oxyde d'indium, Oxyde d'étain, Couche mince, Recuit, Silicium, Epaisseur couche, Dépendance température, Dépôt physique phase vapeur, Microstructure, Cristallite, Spectre absorption, Spectre visible, Résistivité électrique, Facteur mérite, Dispositif optoélectronique, Pulvérisation irradiation, Résonance paramagnétique éléctronique, Substrat verre, 7350, 7866, 7867, 6855J.

English descriptors

KwdEn :
- Absorption spectra, Annealing, Crystallites, Electric resistivity, Electrical properties, Electron paramagnetic resonance, Figure of merit, Indium oxide, Layer thickness, Microstructure, Optical properties, Optoelectronic devices, Physical vapor deposition, Radiofrequency sputtering, Silicon, Sputtering, Temperature dependence, Thin films, Tin oxide, Visible spectra.

Abstract

Indium tin oxide thin films (thickness ∼300 nm) have been deposited on glass at the substrate temperature of 65 °C by radio frequency magnetron sputtering with the power density of 1.25 W cm^-2 under argon atmosphere and annealed subsequently in silicon oil at 200° and 350 °C to investigate systematically the effects on their structural, optical and electrical properties. As-deposited thin films after annealing at 350 °C exhibit marked changes in the microstructure with emergence of crystallites (average size ∼51 nm), high optical transmittance (∼86%) in the visible range, and electrical resistivity as low as 1.24 × 10^-3 Ω-cm with high figure of merit of 5.35 × 10^-3Ω^-1 square - indicating their suitability as transparent conducting anode for optoelectronic devices. Further, the above findings are compared with those observed in case of films annealed in vacuum (∼4 × 10^-4 Pa) at 350 °C.

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Pascal:14-0095755

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structural, electrical and optical properties of radio frequency sputtered indium tin oxide thin films modified by annealing in silicon oil and vacuum</title>
<author><name>RAM NARAYAN CHAUHAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Science Programme, Indian Institute of Technology Kanpur</s1>
<s2>Kanpur 208016</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Inde</country>
<wicri:noRegion>Kanpur 208016</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Anand, R S" uniqKey="Anand R">R. S. Anand</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical Engineering, Indian Institute of Technology Kanpur</s1>
<s2>Kanpur 208016</s2>
<s3>IND</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Inde</country>
<wicri:noRegion>Kanpur 208016</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kumar, Jitendra" uniqKey="Kumar J">Jitendra Kumar</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Materials Science Programme, Indian Institute of Technology Kanpur</s1>
<s2>Kanpur 208016</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Inde</country>
<wicri:noRegion>Kanpur 208016</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">14-0095755</idno>
<date when="2014">2014</date>
<idno type="stanalyst">PASCAL 14-0095755 INIST</idno>
<idno type="RBID">Pascal:14-0095755</idno>
<idno type="wicri:Area/Main/Corpus">000031</idno>
<idno type="wicri:Area/Main/Repository">000037</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term>
<term>Annealing</term>
<term>Crystallites</term>
<term>Electric resistivity</term>
<term>Electrical properties</term>
<term>Electron paramagnetic resonance</term>
<term>Figure of merit</term>
<term>Indium oxide</term>
<term>Layer thickness</term>
<term>Microstructure</term>
<term>Optical properties</term>
<term>Optoelectronic devices</term>
<term>Physical vapor deposition</term>
<term>Radiofrequency sputtering</term>
<term>Silicon</term>
<term>Sputtering</term>
<term>Temperature dependence</term>
<term>Thin films</term>
<term>Tin oxide</term>
<term>Visible spectra</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Propriété électrique</term>
<term>Propriété optique</term>
<term>Pulvérisation haute fréquence</term>
<term>Oxyde d'indium</term>
<term>Oxyde d'étain</term>
<term>Couche mince</term>
<term>Recuit</term>
<term>Silicium</term>
<term>Epaisseur couche</term>
<term>Dépendance température</term>
<term>Dépôt physique phase vapeur</term>
<term>Microstructure</term>
<term>Cristallite</term>
<term>Spectre absorption</term>
<term>Spectre visible</term>
<term>Résistivité électrique</term>
<term>Facteur mérite</term>
<term>Dispositif optoélectronique</term>
<term>Pulvérisation irradiation</term>
<term>Résonance paramagnétique éléctronique</term>
<term>Substrat verre</term>
<term>7350</term>
<term>7866</term>
<term>7867</term>
<term>6855J</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Indium tin oxide thin films (thickness ∼300 nm) have been deposited on glass at the substrate temperature of 65 °C by radio frequency magnetron sputtering with the power density of 1.25 W cm<sup>-2</sup>
 under argon atmosphere and annealed subsequently in silicon oil at 200° and 350 °C to investigate systematically the effects on their structural, optical and electrical properties. As-deposited thin films after annealing at 350 °C exhibit marked changes in the microstructure with emergence of crystallites (average size ∼51 nm), high optical transmittance (∼86%) in the visible range, and electrical resistivity as low as 1.24 × 10<sup>-3</sup>
 Ω-cm with high figure of merit of 5.35 × 10<sup>-3</sup>
Ω<sup>-1</sup>
 square - indicating their suitability as transparent conducting anode for optoelectronic devices. Further, the above findings are compared with those observed in case of films annealed in vacuum (∼4 × 10<sup>-4</sup>
 Pa) at 350 °C.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0>
</fA01>
<fA02 i1="01"><s0>THSFAP</s0>
</fA02>
<fA03 i2="1"><s0>Thin solid films</s0>
</fA03>
<fA05><s2>556</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Structural, electrical and optical properties of radio frequency sputtered indium tin oxide thin films modified by annealing in silicon oil and vacuum</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>RAM NARAYAN CHAUHAN</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>ANAND (R. S.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>KUMAR (Jitendra)</s1>
</fA11>
<fA14 i1="01"><s1>Materials Science Programme, Indian Institute of Technology Kanpur</s1>
<s2>Kanpur 208016</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Electrical Engineering, Indian Institute of Technology Kanpur</s1>
<s2>Kanpur 208016</s2>
<s3>IND</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA20><s1>253-259</s1>
</fA20>
<fA21><s1>2014</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13597</s2>
<s5>354000506177460400</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2014 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>52 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>14-0095755</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Indium tin oxide thin films (thickness ∼300 nm) have been deposited on glass at the substrate temperature of 65 °C by radio frequency magnetron sputtering with the power density of 1.25 W cm<sup>-2</sup>
 under argon atmosphere and annealed subsequently in silicon oil at 200° and 350 °C to investigate systematically the effects on their structural, optical and electrical properties. As-deposited thin films after annealing at 350 °C exhibit marked changes in the microstructure with emergence of crystallites (average size ∼51 nm), high optical transmittance (∼86%) in the visible range, and electrical resistivity as low as 1.24 × 10<sup>-3</sup>
 Ω-cm with high figure of merit of 5.35 × 10<sup>-3</sup>
Ω<sup>-1</sup>
 square - indicating their suitability as transparent conducting anode for optoelectronic devices. Further, the above findings are compared with those observed in case of films annealed in vacuum (∼4 × 10<sup>-4</sup>
 Pa) at 350 °C.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70C50</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H66</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70H67</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B60H55J</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Propriété électrique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Electrical properties</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Propriété optique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Optical properties</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Pulvérisation haute fréquence</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Radiofrequency sputtering</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Pulverización alta frecuencia</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Oxyde d'étain</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Tin oxide</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Estaño óxido</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Thin films</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Recuit</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Annealing</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Silicium</s0>
<s2>NC</s2>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Silicon</s0>
<s2>NC</s2>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Epaisseur couche</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Layer thickness</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Espesor capa</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Dépendance température</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Temperature dependence</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Dépôt physique phase vapeur</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Physical vapor deposition</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Microstructure</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Microstructure</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Cristallite</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Crystallites</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Spectre absorption</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Absorption spectra</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Spectre visible</s0>
<s5>29</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Visible spectra</s0>
<s5>29</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Résistivité électrique</s0>
<s5>30</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Electric resistivity</s0>
<s5>30</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Facteur mérite</s0>
<s5>31</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Figure of merit</s0>
<s5>31</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Factor mérito</s0>
<s5>31</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Dispositif optoélectronique</s0>
<s5>32</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Optoelectronic devices</s0>
<s5>32</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Pulvérisation irradiation</s0>
<s5>33</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Sputtering</s0>
<s5>33</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Résonance paramagnétique éléctronique</s0>
<s5>34</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Electron paramagnetic resonance</s0>
<s5>34</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Substrat verre</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>7350</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>7866</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>7867</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>6855J</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>132</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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Structural, electrical and optical properties of radio frequency sputtered indium tin oxide thin films modified by annealing in silicon oil and vacuum

Structural, electrical and optical properties of radio frequency sputtered indium tin oxide thin films modified by annealing in silicon oil and vacuum

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri